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IPB017N10N5ATMA1 Технические параметры

Infineon Technologies  IPB017N10N5ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7Pins
Weight 1.59999g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 180A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 375W Tc
Turn Off Delay Time 80 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G6
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 375W
Case Connection DRAIN
Turn On Delay Time 33 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.7m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 279μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 15600pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Rise Time 23ns
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Continuous Drain Current (ID) 273A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
Max Junction Temperature (Tj) 175°C
Height 4.5mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPB017N10N5ATMA1 Документы

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