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IPB019N08N3GATMA1 Технические параметры

Infineon Technologies  IPB019N08N3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 180A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 86 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2008
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 7
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G6
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.9m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 270μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 14200pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V
Rise Time 73ns
Vgs (Max) ±20V
Fall Time (Typ) 33 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 2.8V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain to Source Breakdown Voltage 80V
Max Junction Temperature (Tj) 175°C
Height 4.5mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPB019N08N3GATMA1 Документы

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