[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

IPB042N03LGATMA1 Технические параметры

Infineon Technologies  IPB042N03LGATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 70A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 79W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2008
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 79W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.006Ohm
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 60 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Просмотр сходства

IPB042N03LGATMA1 Документы

IPB042N03LGATMA1 brand manufacturers: Infineon Technologies, Anli stock, IPB042N03LGATMA1 reference price.Infineon Technologies. IPB042N03LGATMA1 parameters, IPB042N03LGATMA1 Datasheet PDF and pin diagram description download.You can use the IPB042N03LGATMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPB042N03LGATMA1 pin diagram and circuit diagram and usage method of function,IPB042N03LGATMA1 electronics tutorials.You can download from the Anli.