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IPB09N03LAT Технические параметры
Infineon Technologies IPB09N03LAT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Mounting Type | Surface Mount | |
| Mount | Surface Mount | |
| Supplier Device Package | PG-TO263-3-2 | |
| Power Dissipation (Max) | 63W Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Current - Continuous Drain (Id) @ 25℃ | 50A Tc | |
| Series | OptiMOS™ | |
| Published | 2006 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C~175°C TJ | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Voltage - Rated DC | 25V | |
| Current Rating | 50A | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 8.9mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 20μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1642pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 5V | |
| Rise Time | 88ns | |
| Drain to Source Voltage (Vdss) | 25V | |
| Vgs (Max) | ±20V | |
| Continuous Drain Current (ID) | 50A | |
| Input Capacitance | 1.642nF | |
| Rds On Max | 8.9 mΩ | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
IPB09N03LAT Документы
- DatasheetsIPB09N03LA G
- Other Related DocumentsPart Number Guide
- ConflictMineralStatementInfineon-company-51.pdf
Индекс :
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