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IPB100N06S3-04 Технические параметры

Infineon Technologies  IPB100N06S3-04 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 100A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 214W Tc
Turn Off Delay Time 62 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Voltage - Rated DC 55V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 100A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 214W
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.1m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 14230pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 314nC @ 10V
Rise Time 62ns
Vgs (Max) ±20V
Fall Time (Typ) 62 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 450 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free

IPB100N06S3-04 Документы

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