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IPB100N12S305ATMA1 Технические параметры

Infineon Technologies  IPB100N12S305ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 100A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2017
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.1m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 240μA
Input Capacitance (Ciss) (Max) @ Vds 11570pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
Drain to Source Voltage (Vdss) 120V
Vgs (Max) ±20V
JEDEC-95 Code TO-263AB
Drain Current-Max (Abs) (ID) 100A
Drain-source On Resistance-Max 0.0048Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 120V
Avalanche Energy Rating (Eas) 1445 mJ
RoHS Status ROHS3 Compliant

IPB100N12S305ATMA1 Документы

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