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IPB107N20N3GATMA1 Технические параметры

Infineon Technologies  IPB107N20N3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 88A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 41 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.7m Ω @ 88A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Rise Time 26ns
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 88A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 560 mJ
Max Junction Temperature (Tj) 175°C
Height 4.7mm
RoHS Status ROHS3 Compliant

IPB107N20N3GATMA1 Документы

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