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IPB108N15N3GATMA1 Технические параметры

Infineon Technologies  IPB108N15N3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 83A Tc
Drive Voltage (Max Rds On, Min Rds On) 8V 10V
Number of Elements 1 Element
Power Dissipation (Max) 214W Tc
Turn Off Delay Time 32 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2008
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 214W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.8m Ω @ 83A, 10V
Vgs(th) (Max) @ Id 4V @ 160μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3230pF @ 75V
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 35ns
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Continuous Drain Current (ID) 83A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 150V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPB108N15N3GATMA1 Документы

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