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IPB117N20NFDATMA1 Технические параметры

Infineon Technologies  IPB117N20NFDATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Weight 1.946308g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 84A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 24 ns
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Series OptiMOS™
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11.7m Ω @ 84A, 10V
Vgs(th) (Max) @ Id 4V @ 270μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 6650pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Rise Time 10ns
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 84A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
Drain to Source Breakdown Voltage 200V
Max Junction Temperature (Tj) 175°C
Height 4.82mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPB117N20NFDATMA1 Документы

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