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IPB45N06S4L08ATMA3 Технические параметры

Infineon Technologies  IPB45N06S4L08ATMA3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Lifecycle Status Production (Last Updated: 2 years ago)
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mount Surface Mount
Surface Mount YES
Number of Pins 3Pins
Supplier Device Package PG-TO263-3-2
Number of Terminals 2Terminals
Transistor Element Material SILICON
Package Quantity 1000
Mfr Infineon Technologies
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Power Dissipation (Max) 71W (Tc)
Base Product Number IPB45N
Number of Elements per Chip 1
Package Type D2PAK (TO-263)
Channel Mode Enhancement
MSL MSL 1 - Unlimited
Qualification AEC-Q101
Continuous Drain Current Id 45A
RoHS Compliant
Turn Off Delay Time 45 ns
Vds - Drain-Source Breakdown Voltage 60 V
Vgs th - Gate-Source Threshold Voltage 1.7 V
Pd - Power Dissipation 71 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 16 V, + 16 V
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Qg - Gate Charge 64 nC
Rds On - Drain-Source Resistance 13.7 mOhms
Id - Continuous Drain Current 45 A
Package Description SMALL OUTLINE, R-PSSO-G2
Package Style SMALL OUTLINE
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code Yes
Manufacturer Part Number IPB45N06S4L08ATMA3
Package Shape RECTANGULAR
Manufacturer Infineon Technologies AG
Number of Elements 1 Element
Свойство продукта Значение свойства
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Risk Rank 4.62
Drain Current-Max (ID) 45 A
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Tape & Reel
ECCN Code EAR99
Max Operating Temperature 175 °C
Min Operating Temperature -55 °C
Max Power Dissipation 71 W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1 ChannelChannel
Operating Mode ENHANCEMENT MODE
Power Dissipation 71W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.9mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 2.2V @ 35μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Rise Time 2 ns
Drain to Source Voltage (Vdss) 60 V
Vgs (Max) ±16V
Polarity/Channel Type N-CHANNEL
Continuous Drain Current (ID) 45 A
JEDEC-95 Code TO-263AB
Gate to Source Voltage (Vgs) 16 V
Max Dual Supply Voltage 60 V
Drain-source On Resistance-Max 0.0079 Ω
Pulsed Drain Current-Max (IDM) 180 A
Input Capacitance 4.78 nF
DS Breakdown Voltage-Min 60 V
Channel Type N
Avalanche Energy Rating (Eas) 97 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature -
Rds On Max 7.9 mΩ
On-State Resistance 7.9 mΩ
Lead Free Contains Lead
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IPB45N06S4L08ATMA3 Документы

  • Datasheets
IPB45N06S4L08ATMA3 brand manufacturers: Infineon Technologies, Anli stock, IPB45N06S4L08ATMA3 reference price.Infineon Technologies. IPB45N06S4L08ATMA3 parameters, IPB45N06S4L08ATMA3 Datasheet PDF and pin diagram description download.You can use the IPB45N06S4L08ATMA3 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPB45N06S4L08ATMA3 pin diagram and circuit diagram and usage method of function,IPB45N06S4L08ATMA3 electronics tutorials.You can download from the Anli.