[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

IPB45P03P4L11ATMA1 Технические параметры

Infineon Technologies  IPB45P03P4L11ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 45A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 58W Tc
Turn Off Delay Time 45 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Published 2008
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 58W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 10.8m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 2V @ 85μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 3ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) +5V, -16V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) -45A
Gate to Source Voltage (Vgs) 5V
Max Dual Supply Voltage -30V
Drain-source On Resistance-Max 0.0111Ohm
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 180A
Avalanche Energy Rating (Eas) 110 mJ
Height 4.4mm
Length 10mm
Width 9.25mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Просмотр сходства

IPB45P03P4L11ATMA1 Документы

IPB45P03P4L11ATMA1 brand manufacturers: Infineon Technologies, Anli stock, IPB45P03P4L11ATMA1 reference price.Infineon Technologies. IPB45P03P4L11ATMA1 parameters, IPB45P03P4L11ATMA1 Datasheet PDF and pin diagram description download.You can use the IPB45P03P4L11ATMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPB45P03P4L11ATMA1 pin diagram and circuit diagram and usage method of function,IPB45P03P4L11ATMA1 electronics tutorials.You can download from the Anli.