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Infineon Technologies IPB60R040C7ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 18 Weeks | |
| Package / Case | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-3 | |
| Turn Off Delay Time | 81 ns | |
| Power Dissipation (Max) | 227W Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Current - Continuous Drain (Id) @ 25℃ | 50A Tc | |
| Published | 2014 | |
| Series | CoolMOS™ C7 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C~150°C TJ | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Channels | 1Channel | |
| Power Dissipation | 227W | |
| Turn On Delay Time | 18.5 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 24.9A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1.24mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 4340pF @ 400V | |
| Gate Charge (Qg) (Max) @ Vgs | 107nC @ 10V | |
| Drain to Source Voltage (Vdss) | 650V | |
| Vgs (Max) | ±20V | |
| Continuous Drain Current (ID) | 50A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 600V | |
| Max Junction Temperature (Tj) | 150°C | |
| Drain to Source Resistance | 34mOhm | |
| Height | 4.5mm | |
| RoHS Status | ROHS3 Compliant |