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IPB60R040C7ATMA1 Технические параметры

Infineon Technologies  IPB60R040C7ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Package / Case TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Turn Off Delay Time 81 ns
Power Dissipation (Max) 227W Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25℃ 50A Tc
Published 2014
Series CoolMOS™ C7
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Свойство продукта Значение свойства
Number of Channels 1Channel
Power Dissipation 227W
Turn On Delay Time 18.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40mOhm @ 24.9A, 10V
Vgs(th) (Max) @ Id 4V @ 1.24mA
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Drain to Source Voltage (Vdss) 650V
Vgs (Max) ±20V
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 34mOhm
Height 4.5mm
RoHS Status ROHS3 Compliant

IPB60R040C7ATMA1 Документы

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