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IPB60R160C6ATMA1 Технические параметры

Infineon Technologies  IPB60R160C6ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 2Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 23.8A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 176W Tc
Turn Off Delay Time 96 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™
Published 2008
JESD-609 Code e3
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 176W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 11.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 750μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1660pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 23.8A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 497 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPB60R160C6ATMA1 Документы

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