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IPB60R165CPATMA1 Технические параметры

Infineon Technologies  IPB60R165CPATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 40 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 21A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 192W Tc
Turn Off Delay Time 50 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™
Published 2008
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Voltage - Rated DC 600V
Terminal Position SINGLE
Terminal Form GULL WING
Current Rating 21A
Свойство продукта Значение свойства
Pin Count 4
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 192W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 165m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3.5V @ 790μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Rise Time 5ns
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Avalanche Energy Rating (Eas) 522 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPB60R165CPATMA1 Документы

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