[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

IPB65R150CFDATMA1 Технические параметры

Infineon Technologies  IPB65R150CFDATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 22.4A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 195.3W Tc
Turn Off Delay Time 52.8 ns
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series CoolMOS™
Published 2008
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 4
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 195.3W
Case Connection DRAIN
Turn On Delay Time 12.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 9.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 900μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2340pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 7.6ns
Vgs (Max) ±20V
Fall Time (Typ) 5.6 ns
Continuous Drain Current (ID) 22.4A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 72A
Max Junction Temperature (Tj) 150°C
Height 4.7mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Просмотр сходства

IPB65R150CFDATMA1 Документы

IPB65R150CFDATMA1 brand manufacturers: Infineon Technologies, Anli stock, IPB65R150CFDATMA1 reference price.Infineon Technologies. IPB65R150CFDATMA1 parameters, IPB65R150CFDATMA1 Datasheet PDF and pin diagram description download.You can use the IPB65R150CFDATMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPB65R150CFDATMA1 pin diagram and circuit diagram and usage method of function,IPB65R150CFDATMA1 electronics tutorials.You can download from the Anli.