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IPB70N04S3-07 Технические параметры

Infineon Technologies  IPB70N04S3-07 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 79W Tc
Turn Off Delay Time 17 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
HTS Code 8541.29.00.95
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 79W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.2m Ω @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 50μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 8ns
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain Current-Max (Abs) (ID) 70A
Drain-source On Resistance-Max 0.0071Ohm
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 145 mJ
Height 4.4mm
Length 10mm
Width 9.25mm
RoHS Status RoHS Compliant

IPB70N04S3-07 Документы

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