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IPB70N10S312ATMA1 Технические параметры

Infineon Technologies  IPB70N10S312ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 70A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 125W Tc
Turn Off Delay Time 25 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11.3m Ω @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 83μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4355pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Rise Time 8ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Pulsed Drain Current-Max (IDM) 280A
Avalanche Energy Rating (Eas) 410 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPB70N10S312ATMA1 Документы

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