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IPB70N12S311ATMA1 Технические параметры

Infineon Technologies  IPB70N12S311ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Surface Mount YES
Transistor Element Material SILICON
Number of Elements 1 Element
Operating Temperature (Min.) -55°C
Packaging Tape & Reel (TR)
Published 2016
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-263AB
Drain Current-Max (Abs) (ID) 70A
Drain-source On Resistance-Max 0.0113Ohm
Pulsed Drain Current-Max (IDM) 280A
DS Breakdown Voltage-Min 120V
Avalanche Energy Rating (Eas) 410 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
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IPB70N12S311ATMA1 Документы

IPB70N12S311ATMA1 brand manufacturers: Infineon Technologies, Anli stock, IPB70N12S311ATMA1 reference price.Infineon Technologies. IPB70N12S311ATMA1 parameters, IPB70N12S311ATMA1 Datasheet PDF and pin diagram description download.You can use the IPB70N12S311ATMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPB70N12S311ATMA1 pin diagram and circuit diagram and usage method of function,IPB70N12S311ATMA1 electronics tutorials.You can download from the Anli.