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IPB70P04P409ATMA1 Технические параметры

Infineon Technologies  IPB70P04P409ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 72A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 75W Tc
Turn Off Delay Time 24 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Published 2011
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 75W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.1m Ω @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 120μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4810pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Polarity/Channel Type P-CHANNEL
Fall Time (Typ) 31 ns
Continuous Drain Current (ID) -70A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -40V
Drain Current-Max (Abs) (ID) 72A
Drain-source On Resistance-Max 0.0094Ohm
Drain to Source Breakdown Voltage -40V
Pulsed Drain Current-Max (IDM) 288A
Avalanche Energy Rating (Eas) 24 mJ
Height 4.4mm
Length 10mm
Width 9.25mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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IPB70P04P409ATMA1 Документы

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