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IPB80N04S2H4ATMA2 Технические параметры

Infineon Technologies  IPB80N04S2H4ATMA2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 10 Weeks
Contact Plating Tin
Package / Case TO-263-3
Surface Mount YES
Number of Pins 3Pins
Number of Elements 1 Element
Turn Off Delay Time 46 ns
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Max Power Dissipation 300W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 23 ns
Halogen Free Halogen Free
Rise Time 63ns
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 22 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain to Source Breakdown Voltage 40V
Input Capacitance 4.4nF
Avalanche Energy Rating (Eas) 660 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Rds On Max 3.7 mΩ
RoHS Status ROHS3 Compliant
Просмотр сходства

IPB80N04S2H4ATMA2 Документы

IPB80N04S2H4ATMA2 brand manufacturers: Infineon Technologies, Anli stock, IPB80N04S2H4ATMA2 reference price.Infineon Technologies. IPB80N04S2H4ATMA2 parameters, IPB80N04S2H4ATMA2 Datasheet PDF and pin diagram description download.You can use the IPB80N04S2H4ATMA2 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPB80N04S2H4ATMA2 pin diagram and circuit diagram and usage method of function,IPB80N04S2H4ATMA2 electronics tutorials.You can download from the Anli.