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IPB80P03P4L04ATMA1 Технические параметры

Infineon Technologies  IPB80P03P4L04ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 137W Tc
Turn Off Delay Time 140 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2008
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 4.1m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 253μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 11300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) +5V, -16V
Fall Time (Typ) 40 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 5V
Max Dual Supply Voltage -30V
Drain-source On Resistance-Max 0.007Ohm
Avalanche Energy Rating (Eas) 410 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPB80P03P4L04ATMA1 Документы

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