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IPD060N03LGATMA1 Технические параметры

Infineon Technologies  IPD060N03LGATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 3Pins
Transistor Element Material SILICON
Turn Off Delay Time 20 ns
Power Dissipation (Max) 56W Tc
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Current - Continuous Drain (Id) @ 25℃ 50A Tc
Published 2008
Series OptiMOS™
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 56W
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 3ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.009Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 60 mJ
Width 6.22mm
Length 6.73mm
Height 2.41mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPD060N03LGATMA1 Документы

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