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IPD068P03L3GATMA1 Технические параметры

Infineon Technologies  IPD068P03L3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 70A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 100W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Свойство продукта Значение свойства
Terminal Position SINGLE
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.8m Ω @ 70A, 10V
Vgs(th) (Max) @ Id 2V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 7720pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Continuous Drain Current (ID) 70A
Drain-source On Resistance-Max 0.0068Ohm
Pulsed Drain Current-Max (IDM) 280A
Avalanche Energy Rating (Eas) 149 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IPD068P03L3GATMA1 Документы

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