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IPD082N10N3GATMA1 Технические параметры

Infineon Technologies  IPD082N10N3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 125W Tc
Turn Off Delay Time 31 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.2m Ω @ 73A, 10V
Vgs(th) (Max) @ Id 3.5V @ 75μA
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 42ns
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.0082Ohm
Avalanche Energy Rating (Eas) 110 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IPD082N10N3GATMA1 Документы

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