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IPD220N06L3GATMA1 Технические параметры

Infineon Technologies  IPD220N06L3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3-311
Mfr Infineon Technologies
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Power Dissipation (Max) 36W (Tc)
Base Product Number IPD220N
Vds - Drain-Source Breakdown Voltage 60 V
Vgs th - Gate-Source Threshold Voltage 2.2 V
Pd - Power Dissipation 36 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Свойство продукта Значение свойства
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Channel Mode Enhancement
Qg - Gate Charge 7 nC
Rds On - Drain-Source Resistance 22 mOhms
Id - Continuous Drain Current 30 A
Operating Temperature -55°C ~ 175°C (TJ)
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 22mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 11μA
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V
Drain to Source Voltage (Vdss) 60 V
Vgs (Max) ±20V
FET Feature -
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IPD220N06L3GATMA1 Документы

  • Datasheets
IPD220N06L3GATMA1 brand manufacturers: Infineon Technologies, Anli stock, IPD220N06L3GATMA1 reference price.Infineon Technologies. IPD220N06L3GATMA1 parameters, IPD220N06L3GATMA1 Datasheet PDF and pin diagram description download.You can use the IPD220N06L3GATMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPD220N06L3GATMA1 pin diagram and circuit diagram and usage method of function,IPD220N06L3GATMA1 electronics tutorials.You can download from the Anli.