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IPD25CN10NGATMA1 Технические параметры

Infineon Technologies  IPD25CN10NGATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 35A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 71W Tc
Turn Off Delay Time 13 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2008
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 71W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 39μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 4ns
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.025Ohm
Pulsed Drain Current-Max (IDM) 140A
Avalanche Energy Rating (Eas) 65 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPD25CN10NGATMA1 Документы

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