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IPD50N06S4L12ATMA2 Технические параметры

Infineon Technologies  IPD50N06S4L12ATMA2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 3.949996g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 50A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 50W Tc
Turn Off Delay Time 25 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 2890pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 2ns
Vgs (Max) ±16V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 60V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 33 mJ
RoHS Status ROHS3 Compliant

IPD50N06S4L12ATMA2 Документы

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