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IPD50R1K4CEAUMA1 Технические параметры

Infineon Technologies  IPD50R1K4CEAUMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Current - Continuous Drain (Id) @ 25℃ 3.1A Tc
Drive Voltage (Max Rds On, Min Rds On) 13V
Number of Elements 1 Element
Power Dissipation (Max) 42W Tc
Turn Off Delay Time 23 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™ CE
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Свойство продукта Значение свойства
Terminal Finish Tin (Sn)
Reach Compliance Code not_compliant
Element Configuration Single
Power Dissipation 25W
Turn On Delay Time 6.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4 Ω @ 900mA, 13V
Vgs(th) (Max) @ Id 3.5V @ 70μA
Input Capacitance (Ciss) (Max) @ Vds 178pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Rise Time 6ns
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) 3.1A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 550V
Height 2.41mm
Length 6.73mm
Width 6.22mm
RoHS Status ROHS3 Compliant

IPD50R1K4CEAUMA1 Документы

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