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Infineon Technologies IPD50R1K4CEAUMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 18 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 3.1A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 13V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 42W Tc | |
| Turn Off Delay Time | 23 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | CoolMOS™ CE | |
| Published | 2008 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Tin (Sn) | |
| Reach Compliance Code | not_compliant | |
| Element Configuration | Single | |
| Power Dissipation | 25W | |
| Turn On Delay Time | 6.5 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 1.4 Ω @ 900mA, 13V | |
| Vgs(th) (Max) @ Id | 3.5V @ 70μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 178pF @ 100V | |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 10V | |
| Rise Time | 6ns | |
| Drain to Source Voltage (Vdss) | 500V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 30 ns | |
| Continuous Drain Current (ID) | 3.1A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain to Source Breakdown Voltage | 550V | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| RoHS Status | ROHS3 Compliant |