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IPD50R380CEAUMA1 Технические параметры

Infineon Technologies  IPD50R380CEAUMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 14.1A Tc
Drive Voltage (Max Rds On, Min Rds On) 13V
Number of Elements 1 Element
Power Dissipation (Max) 98W Tc
Turn Off Delay Time 35 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™
Published 2008
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 98W
Case Connection DRAIN
Turn On Delay Time 7.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 3.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 260μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 584pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 24.8nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 14.1A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
Drain to Source Breakdown Voltage 500V
Max Junction Temperature (Tj) 150°C
FET Feature Super Junction
Height 2.55mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPD50R380CEAUMA1 Документы

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