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IPD50R500CEAUMA1 Технические параметры

Infineon Technologies  IPD50R500CEAUMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 7.6A Tc
Drive Voltage (Max Rds On, Min Rds On) 13V
Number of Elements 1 Element
Power Dissipation (Max) 57W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™
Published 2005
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 500m Ω @ 2.3A, 13V
Vgs(th) (Max) @ Id 3.5V @ 200μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 433pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 18.7nC @ 10V
Drain to Source Voltage (Vdss) 550V
Vgs (Max) ±20V
Max Dual Supply Voltage 500V
Drain-source On Resistance-Max 0.5Ohm
Pulsed Drain Current-Max (IDM) 24A
Avalanche Energy Rating (Eas) 129 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPD50R500CEAUMA1 Документы

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