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IPD50R650CEATMA1 Технические параметры

Infineon Technologies  IPD50R650CEATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25℃ 6.1A Tc
Drive Voltage (Max Rds On, Min Rds On) 13V
Power Dissipation (Max) 69W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™ CE
Свойство продукта Значение свойства
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 650m Ω @ 1.8A, 13V
Vgs(th) (Max) @ Id 3.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 342pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±20V
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IPD50R650CEATMA1 Документы

IPD50R650CEATMA1 brand manufacturers: Infineon Technologies, Anli stock, IPD50R650CEATMA1 reference price.Infineon Technologies. IPD50R650CEATMA1 parameters, IPD50R650CEATMA1 Datasheet PDF and pin diagram description download.You can use the IPD50R650CEATMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPD50R650CEATMA1 pin diagram and circuit diagram and usage method of function,IPD50R650CEATMA1 electronics tutorials.You can download from the Anli.