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IPD50R950CEAUMA1 Технические параметры

Infineon Technologies  IPD50R950CEAUMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Package / Case TO-252-3
Number of Pins 3Pins
Number of Elements 1 Element
Turn Off Delay Time 25 ns
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 34W
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 34W
Turn On Delay Time 7 ns
Transistor Application SWITCHING
Halogen Free Halogen Free
Rise Time 4.9ns
Drain to Source Voltage (Vdss) 500V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 19.5 ns
Continuous Drain Current (ID) 4.3A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 12.8A
Input Capacitance 231pF
Avalanche Energy Rating (Eas) 68 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 950mOhm
Rds On Max 950 mΩ
Height 2.41mm
Length 6.73mm
Width 6.22mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

IPD50R950CEAUMA1 Документы

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