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IPD60N10S4L12ATMA1 Технические параметры

Infineon Technologies  IPD60N10S4L12ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Weight 3.949996g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 60A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 94W Tc
Turn Off Delay Time 20 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, HEXFET®
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 2.1V @ 46μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3170pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Rise Time 3ns
Vgs (Max) ±16V
Fall Time (Typ) 21 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 240A
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPD60N10S4L12ATMA1 Документы

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