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IPD60R1K5CEAUMA1 Технические параметры

Infineon Technologies  IPD60R1K5CEAUMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 5A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 49W Tc
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 9.4nC @ 10V
Drain to Source Voltage (Vdss) 650V
Vgs (Max) ±20V
Max Dual Supply Voltage 600V
Drain Current-Max (Abs) (ID) 5A
Pulsed Drain Current-Max (IDM) 8A
Avalanche Energy Rating (Eas) 26 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPD60R1K5CEAUMA1 Документы

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