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IPD60R385CPATMA1 Технические параметры

Infineon Technologies  IPD60R385CPATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Supplier Device Package PG-TO252-3
Weight 3.949996g
Current - Continuous Drain (Id) @ 25℃ 9A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 83W Tc
Turn Off Delay Time 40 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™ CP
Published 2008
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 600V
Свойство продукта Значение свойства
Current Rating 9A
Number of Channels 1Channel
Power Dissipation 83W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 340μA
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 600V
Input Capacitance 790pF
Drain to Source Resistance 350mOhm
Rds On Max 385 mΩ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IPD60R385CPATMA1 Документы

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