[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

IPD65R225C7ATMA1 Технические параметры

Infineon Technologies  IPD65R225C7ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 3Pins
Transistor Element Material SILICON
Turn Off Delay Time 48 ns
Power Dissipation (Max) 63W Tc
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25℃ 11A Tc
Published 2013
Series CoolMOS™ C7
Packaging Cut Tape (CT)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 63W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 225m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 240μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 996pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 6ns
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.225Ohm
Avalanche Energy Rating (Eas) 48 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Просмотр сходства

IPD65R225C7ATMA1 Документы

IPD65R225C7ATMA1 brand manufacturers: Infineon Technologies, Anli stock, IPD65R225C7ATMA1 reference price.Infineon Technologies. IPD65R225C7ATMA1 parameters, IPD65R225C7ATMA1 Datasheet PDF and pin diagram description download.You can use the IPD65R225C7ATMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPD65R225C7ATMA1 pin diagram and circuit diagram and usage method of function,IPD65R225C7ATMA1 electronics tutorials.You can download from the Anli.