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IPD65R250C6XTMA1 Технические параметры

Infineon Technologies  IPD65R250C6XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 16.1A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 208.3W Tc
Turn Off Delay Time 100 ns
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series CoolMOS™
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 400μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Rise Time 11ns
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 16.1A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.25Ohm
Drain to Source Breakdown Voltage 700V
Pulsed Drain Current-Max (IDM) 46A
Avalanche Energy Rating (Eas) 290 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free

IPD65R250C6XTMA1 Документы

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