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IPD65R600E6ATMA1 Технические параметры

Infineon Technologies  IPD65R600E6ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 7.3A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 63W Tc
Turn Off Delay Time 64 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™ E6
Published 2008
JESD-609 Code e3
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 63W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 8ns
Drain to Source Voltage (Vdss) 650V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 7.3A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.6Ohm
Drain to Source Breakdown Voltage 700V
Pulsed Drain Current-Max (IDM) 18A
Avalanche Energy Rating (Eas) 142 mJ
Height 2.41mm
Length 6.73mm
Width 6.22mm
RoHS Status ROHS3 Compliant
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IPD65R600E6ATMA1 Документы

IPD65R600E6ATMA1 brand manufacturers: Infineon Technologies, Anli stock, IPD65R600E6ATMA1 reference price.Infineon Technologies. IPD65R600E6ATMA1 parameters, IPD65R600E6ATMA1 Datasheet PDF and pin diagram description download.You can use the IPD65R600E6ATMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPD65R600E6ATMA1 pin diagram and circuit diagram and usage method of function,IPD65R600E6ATMA1 electronics tutorials.You can download from the Anli.