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IPD65R660CFDAATMA1 Технические параметры

Infineon Technologies  IPD65R660CFDAATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 62.5W Tc
Turn Off Delay Time 40 ns
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, CoolMOS™
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 660m Ω @ 3.22A, 10V
Vgs(th) (Max) @ Id 4.5V @ 214.55μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 543pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 8ns
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 6A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.66Ohm
Pulsed Drain Current-Max (IDM) 17A
Avalanche Energy Rating (Eas) 115 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPD65R660CFDAATMA1 Документы

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