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IPD80P03P4L07ATMA1 Технические параметры

Infineon Technologies  IPD80P03P4L07ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 88W Tc
Turn Off Delay Time 15 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2008
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 88W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.8m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 130μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 4ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) +5V, -16V
Fall Time (Typ) 60 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 5V
Max Dual Supply Voltage -30V
Drain-source On Resistance-Max 0.0068Ohm
Pulsed Drain Current-Max (IDM) 320A
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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IPD80P03P4L07ATMA1 Документы

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