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IPD80R1K0CEATMA1 Технические параметры

Infineon Technologies  IPD80R1K0CEATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Supplier Device Package PG-TO252-3
Weight 3.949996g
Current - Continuous Drain (Id) @ 25℃ 5.7A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 83W Tc
Turn Off Delay Time 72 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™ CE
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Number of Channels 1Channel
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 83W
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 950mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 785pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 800V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 5.7A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 800V
Drain to Source Breakdown Voltage 800V
Input Capacitance 785pF
Drain to Source Resistance 800mOhm
Rds On Max 950 mΩ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IPD80R1K0CEATMA1 Документы

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