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IPD80R1K4CEATMA1 Технические параметры

Infineon Technologies  IPD80R1K4CEATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Supplier Device Package PG-TO252-3
Weight 3.949996g
Current - Continuous Drain (Id) @ 25℃ 3.9A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 63W Tc
Turn Off Delay Time 72 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Свойство продукта Значение свойства
Number of Channels 1Channel
Element Configuration Single
Power Dissipation 63W
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id 3.9V @ 240μA
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 800V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 3.9A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 800V
Input Capacitance 570pF
Drain to Source Resistance 1.4Ohm
Rds On Max 1.4 Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IPD80R1K4CEATMA1 Документы

IPD80R1K4CEATMA1 brand manufacturers: Infineon Technologies, Anli stock, IPD80R1K4CEATMA1 reference price.Infineon Technologies. IPD80R1K4CEATMA1 parameters, IPD80R1K4CEATMA1 Datasheet PDF and pin diagram description download.You can use the IPD80R1K4CEATMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPD80R1K4CEATMA1 pin diagram and circuit diagram and usage method of function,IPD80R1K4CEATMA1 electronics tutorials.You can download from the Anli.