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IPD80R3K3P7ATMA1 Технические параметры

Infineon Technologies  IPD80R3K3P7ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.9A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 18W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™ P7
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Position SINGLE
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3 Ω @ 590mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 30μA
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 500V
Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V
Drain to Source Voltage (Vdss) 800V
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Pulsed Drain Current-Max (IDM) 3.8A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 2 mJ
RoHS Status ROHS3 Compliant
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IPD80R3K3P7ATMA1 Документы

IPD80R3K3P7ATMA1 brand manufacturers: Infineon Technologies, Anli stock, IPD80R3K3P7ATMA1 reference price.Infineon Technologies. IPD80R3K3P7ATMA1 parameters, IPD80R3K3P7ATMA1 Datasheet PDF and pin diagram description download.You can use the IPD80R3K3P7ATMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPD80R3K3P7ATMA1 pin diagram and circuit diagram and usage method of function,IPD80R3K3P7ATMA1 electronics tutorials.You can download from the Anli.