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IPD80R4K5P7ATMA1 Технические параметры

Infineon Technologies  IPD80R4K5P7ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.5A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 13W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5 Ω @ 400mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 500V
Gate Charge (Qg) (Max) @ Vgs 4nC @ 10V
Drain to Source Voltage (Vdss) 800V
Vgs (Max) ±20V
Continuous Drain Current (ID) 1.5A
JEDEC-95 Code TO-252AA
Pulsed Drain Current-Max (IDM) 2.6A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 1 mJ
FET Feature Super Junction
RoHS Status ROHS3 Compliant

IPD80R4K5P7ATMA1 Документы

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