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IPD90N03S4L03ATMA1 Технические параметры

Infineon Technologies  IPD90N03S4L03ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 90A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 94W Tc
Turn Off Delay Time 37 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 2.2V @ 45μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Rise Time 6ns
Vgs (Max) ±16V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 90A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 85 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPD90N03S4L03ATMA1 Документы

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