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IPD90P04P4L04ATMA1 Технические параметры

Infineon Technologies  IPD90P04P4L04ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 90A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 125W Tc
Turn Off Delay Time 140 ns
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Series OptiMOS™
Published 2003
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 4.3m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 11570pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 176nC @ 10V
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±16V
Fall Time (Typ) 60 ns
Continuous Drain Current (ID) -90A
Threshold Voltage -1.7V
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage -40V
Drain to Source Breakdown Voltage -40V
Avalanche Energy Rating (Eas) 60 mJ
Max Junction Temperature (Tj) 175°C
Height 2.35mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPD90P04P4L04ATMA1 Документы

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