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IPD90R1K2C3ATMA1 Технические параметры

Infineon Technologies  IPD90R1K2C3ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Supplier Device Package PG-TO252-3
Weight 3.949996g
Current - Continuous Drain (Id) @ 25℃ 5.1A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 83W Tc
Turn Off Delay Time 400 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Свойство продукта Значение свойства
Number of Channels 1Channel
Element Configuration Single
Power Dissipation 83W
Turn On Delay Time 70 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 310μA
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 900V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Continuous Drain Current (ID) 5.1A
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 900V
Input Capacitance 710pF
Drain to Source Resistance 1.2Ohm
Rds On Max 1.2 Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IPD90R1K2C3ATMA1 Документы

IPD90R1K2C3ATMA1 brand manufacturers: Infineon Technologies, Anli stock, IPD90R1K2C3ATMA1 reference price.Infineon Technologies. IPD90R1K2C3ATMA1 parameters, IPD90R1K2C3ATMA1 Datasheet PDF and pin diagram description download.You can use the IPD90R1K2C3ATMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPD90R1K2C3ATMA1 pin diagram and circuit diagram and usage method of function,IPD90R1K2C3ATMA1 electronics tutorials.You can download from the Anli.