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IPDD60R050G7XTMA1 Технические параметры

Infineon Technologies  IPDD60R050G7XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case 10-PowerSOP Module
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 47A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 278W Tc
Turn Off Delay Time 72 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™ G7
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10Terminations
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 278W
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 15.9A, 10V
Vgs(th) (Max) @ Id 4V @ 800μA
Input Capacitance (Ciss) (Max) @ Vds 2670pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 47A
JEDEC-95 Code TO-252
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage 600V
Max Junction Temperature (Tj) 150°C
Height 2.5mm
RoHS Status ROHS3 Compliant
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IPDD60R050G7XTMA1 Документы

IPDD60R050G7XTMA1 brand manufacturers: Infineon Technologies, Anli stock, IPDD60R050G7XTMA1 reference price.Infineon Technologies. IPDD60R050G7XTMA1 parameters, IPDD60R050G7XTMA1 Datasheet PDF and pin diagram description download.You can use the IPDD60R050G7XTMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPDD60R050G7XTMA1 pin diagram and circuit diagram and usage method of function,IPDD60R050G7XTMA1 electronics tutorials.You can download from the Anli.