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IPDD60R125CFD7XTMA1 Технические параметры

Infineon Technologies  IPDD60R125CFD7XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case 10-PowerSOP Module
Supplier Device Package PG-HDSOP-10-1
Mfr Infineon Technologies
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 27A (Tc)
Power Dissipation (Max) 176W (Tc)
Base Product Number IPDD60
Qualification -
Continuous Drain Current Id 27A
Vds - Drain-Source Breakdown Voltage 600 V
Vgs th - Gate-Source Threshold Voltage 4.5 V
Pd - Power Dissipation 176 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 1700
Mounting Styles SMD/SMT
Channel Mode Enhancement
Part # Aliases IPDD60R125CFD7 SP005060552
Свойство продукта Значение свойства
Manufacturer Infineon
Brand Infineon Technologies
Qg - Gate Charge 31 nC
Rds On - Drain-Source Resistance 125 mOhms
RoHS Details
Id - Continuous Drain Current 27 A
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Cut Tape
Subcategory MOSFETs
Number of Channels 1 ChannelChannel
Power Dissipation 176W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 125mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 340μA
Input Capacitance (Ciss) (Max) @ Vds 1329 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Vgs (Max) ±20V
Product Type MOSFET
Channel Type N Channel
FET Feature -
Product Category MOSFET
Просмотр сходства
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