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IPF09N03LA G Технические параметры

Infineon Technologies  IPF09N03LA G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 50A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 63W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2008
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position SINGLE
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 1642pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Drain to Source Voltage (Vdss) 25V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 50A
Drain-source On Resistance-Max 0.0148Ohm
Pulsed Drain Current-Max (IDM) 350A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 75 mJ
RoHS Status RoHS Compliant

IPF09N03LA G Документы

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